609 research outputs found

    Gait analyses of parkinsonā€™s disease patients using multiscale entropy

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    Copyright: Ā© 2021 by the author(s). Parkinsonā€™s disease (PD) is a type of neurodegenerative diseases. PD influences gait in many aspects: reduced gait speed and step length, increased axial rigidity, and impaired rhythmicity. Gait-related data used in this study are from PhysioNet. Twenty-one PD patients and five healthy controls (CO) were sorted into four groups: PD without task (PDw), PD with dual task (PDd), control without task (COw), and control with dual task (COd). Since dual task actions are attention demanding, either gait or cognitive function may be affected. To quantify the used walking data, eight pressure sensors installed in each insole are used to measure the vertical ground reaction force. Thus, quantitative measurement analysis is performed utilizing multiscale entropy (MSE) and complexity index (CI) to analyze and differentiate between the ground reaction force of the four different groups. Results show that the CI of patients with PD is higher than that of CO and 11 of the sensor signals are statistically significant (p < 0.05). The COd group has larger CI values at the beginning (p = 0.021) but they get lower at the end of the test (p = 0.000) compared to that in the COw group. The end-of-test CI for the PDw group is lower in one of the feet sensor signals, and in the right total ground reaction force compared to the PDd group counterparts. In conclusion, when people start to adjust their gait due to pathology or stress, CI may increase first and reach a peak, but it decreases afterward when stress or pathology is further increased

    Passive PT -symmetric couplers without complex optical potentials

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    Ā© 2015 American Physical Society. In addition to the implementation of parity-time-(PT-) symmetric optical systems by carefully and actively controlling the gain and loss, we show that a 2Ɨ2 PT-symmetric Hamiltonian has a unitarily equivalent representation without complex optical potentials in the resulting optical coupler. Through the Naimark dilation in operator algebra, passive PT-symmetric couplers can thus be implemented with a refractive index of real values and asymmetric coupling coefficients. This opens up the possibility to implement general PT-symmetric systems with state-of-the-art asymmetric slab waveguides, dissimilar optical fibers, or cavities with chiral mirrors

    Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

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    Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information adde

    Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

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    Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator Bi2_2Se3_3 gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in Bi2_2Se3_3. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space.Comment: 12 pages, 3 figure

    The space group classification of topological band insulators

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    Topological band insulators (TBIs) are bulk insulating materials which feature topologically protected metallic states on their boundary. The existing classification departs from time-reversal symmetry, but the role of the crystal lattice symmetries in the physics of these topological states remained elusive. Here we provide the classification of TBIs protected not only by time-reversal, but also by crystalline symmetries. We find three broad classes of topological states: (a) Gamma-states robust against general time-reversal invariant perturbations; (b) Translationally-active states protected from elastic scattering, but susceptible to topological crystalline disorder; (c) Valley topological insulators sensitive to the effects of non-topological and crystalline disorder. These three classes give rise to 18 different two-dimensional, and, at least 70 three-dimensional TBIs, opening up a route for the systematic search for new types of TBIs.Comment: Accepted in Nature Physic

    Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

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    A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.Comment: 5 pages, 4 figures, 1 tabl

    Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit

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    Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi_2Se_3 in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9\times10^16cm^-3, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the \nu =1 Landau level attained by a field of 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.Comment: 5 pages, 4 figure
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